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LMG3411R070RWHR

Name: Texas Instruments LMG3411R070RWHR
Brand: Texas Instruments
SKU: 595-LMG3411R070RWHR
Price: 6.63 EUR
Availability: OutOfStock

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Mouser No:

595-LMG3411R070RWHR

Mfr. No:

LMG3411R070RWHR

Mfr.:

Texas Instruments

Description:

Gate Drivers 600-V 70-m? GaN with integrated driver a A 595-LMG3411R070RWHT

Datasheet:

LMG3411R070RWHR Datasheet

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More Information

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Availability

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Factory Lead Time:: 12 Weeks Estimated factory production time.

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Minimum: 2000 Multiples: 2000

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Ext. Price:

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Est. Tariff:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 2000)
	6,63 €	13.260,00 €
4.000	Quote

Alternative Packaging

Mfr. Part No.:

LMG3411R070RWHT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

17,42 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

LMG3411R070RWHT

Description:

Gate Drivers 600-V 70-m? GaN with integrated driver a A 595-LMG3411R070RWHR

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	MOSFET Gate Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	QFN-32
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Supply Voltage - Min:	9.5 V
Supply Voltage - Max:	18 V
Rise Time:	15 ns
Fall Time:	4.2 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3411R070
Packaging:	Reel
Brand:	Texas Instruments
Maximum Turn-Off Delay Time:	10 ns
Maximum Turn-On Delay Time:	12 ns
Moisture Sensitive:	Yes
Operating Supply Current:	43 mA
Output Voltage:	5 V
Product Type:	Gate Drivers
Propagation Delay - Max:	36 ns
Rds On - Drain-Source Resistance:	70 mOhms
Factory Pack Quantity:	2000
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	GaN

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Datasheet

LMG3411R070RWHR Datasheet

Application Notes

PCN

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USHTS:: 8542390090
ECCN:: EAR99

LMG3410R070 600V 70mΩ GaN Power Stage

Texas Instruments LMG3410R070 600V 70mΩ GaN Power Stage with integrated driver and protection offers advantages over silicon MOSFETs. These include ultra-low input and output capacitance. Features include zero reverse recovery, reducing switching losses by as much as 80%, and low switch node ringing to decrease EMI.