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LMG3410R050RWHR

Name: Texas Instruments LMG3410R050RWHR
Brand: Texas Instruments
SKU: 595-LMG3410R050RWHR
Price: 7.76 EUR
Availability: OutOfStock

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Mouser No:

595-LMG3410R050RWHR

Mfr. No:

LMG3410R050RWHR

Mfr.:

Texas Instruments

Description:

Power Switch ICs - Power Distribution 600-V 50-m? GaN with integrated driver a A 595-LMG3410R050RWHT

Datasheet:

LMG3410R050RWHR Datasheet

ECAD Model:

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More Information

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Availability

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Factory Lead Time:: 12 Weeks Estimated factory production time.

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Minimum: 2000 Multiples: 2000

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 2000)
	7,76 €	15.520,00 €
4.000	Quote

Alternative Packaging

Mfr. Part No.:

LMG3410R050RWHT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

17,11 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

LMG3410R050RWHT

Description:

Power Switch ICs - Power Distribution 600-V 50-m? GaN with integrated driver a A 595-LMG3410R050RWHR

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Power Switch ICs - Power Distribution
RoHS:
Type:	GaN Power Stage
Number of Outputs:	1 Output
On Resistance - Max:	57 mOhms
On Time - Max:	16 ns
Off Time - Max:	32 ns
Operating Supply Voltage:	12 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Mounting Style:	SMD/SMT
Package/Case:	QFN-32
Series:	LMG3410R050
Packaging:	Reel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Moisture Sensitive:	Yes
Product:	Power Switch ICs
Product Type:	Power Switch ICs - Power Distribution
Factory Pack Quantity:	2000
Subcategory:	Switch ICs
Supply Voltage - Max:	18 V
Supply Voltage - Min:	9.5 V
Tradename:	GaN

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Datasheet

LMG3410R050RWHR Datasheet

Application Notes

Models

LMG3410R050RWHR Symbol & Footprint by SnapMagic

PCN

SPICE Models

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TARIC:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

LMG341xR050 GaN Power Stage

Texas Instruments LMG341xR050 GaN Power Stage with integrated driver and protection enables designers to achieve new power density levels and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem pole PFC.