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LM5113QDPRRQ1

Name: Texas Instruments LM5113QDPRRQ1
Brand: Texas Instruments
SKU: 595-LM5113QDPRRQ1
Price: 3.79 EUR
Availability: InStock

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Mouser No:

595-LM5113QDPRRQ1

Mfr. No:

LM5113QDPRRQ1

Mfr.:

Texas Instruments

Description:

Gate Drivers Automotive 1.2-A/5-A 100-V half bridge

Datasheet:

LM5113QDPRRQ1 Datasheet

ECAD Model:

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In Stock: 5.139

Stock:: 5.139 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 4500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,79 €	3,79 €
	2,88 €	28,80 €
	2,65 €	66,25 €
	2,40 €	240,00 €
	2,28 €	570,00 €
	2,21 €	1.105,00 €
	2,15 €	2.150,00 €
	2,10 €	5.250,00 €
Full Reel (Order in multiples of 4500)
	2,05 €	9.225,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	WSON-10
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Output Current:	5 A
Supply Voltage - Min:	4.5 V
Supply Voltage - Max:	5.5 V
Rise Time:	7 ns
Fall Time:	3.5 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LM5113
Qualification:	AEC-Q100
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Maximum Turn-Off Delay Time:	26.5 ns
Maximum Turn-On Delay Time:	28 ns
Operating Supply Current:	2 mA
Product Type:	Gate Drivers
Factory Pack Quantity:	4500
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Unit Weight:	49,200 mg

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Datasheet

LM5113QDPRRQ1 Datasheet

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

LM5113/LM5113-Q1 Half-Bridge Gate Driver

Texas Instruments LM5113/LM5113-Q1 Half-Bridge Gate Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2V. This clamping prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113/LM5113-Q1 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LM5113/LM5113-Q1 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently. The LM5113-Q1 devices are AEC-Q100 qualified for automotive applications.