DRV8300UDPWR

Texas Instruments
595-DRV8300UDPWR
DRV8300UDPWR

Mfr.:

Description:
Gate Drivers 100-V max simple th ree-phase gate drive

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Texas Instruments DRV8300UDPWR

In Stock: 1.783

Stock:
1.783 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
1,32 € 1,32 €
0,963 € 9,63 €
0,869 € 21,73 €
0,771 € 77,10 €
0,725 € 181,25 €
0,697 € 348,50 €
0,674 € 674,00 €
Full Reel (Order in multiples of 3000)
0,413 € 1.239,00 €
0,403 € 2.418,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
3-Phase / Three Phase
SMD/SMT
TSSOP-20
2 Driver
2 Output
750 mA, 1.5 A
8.7 V
20 V
Inverting
24 ns
12 ns
- 40 C
+ 125 C
DRV8300U
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Moisture Sensitive: Yes
Product Type: Gate Drivers
Propagation Delay - Max: 180 ns
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

PCN

This functionality requires JavaScript to be enabled.

CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

DRV8300U Three-Phase Gate Driver

Texas Instruments DRV8300U Three-Phase Gate Driver is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.