DRV8300UDIPWR

Name: Texas Instruments DRV8300UDIPWR
Brand: Texas Instruments
SKU: 595-DRV8300UDIPWR
Price: 1.5 EUR
Availability: InStock

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Mouser No:

595-DRV8300UDIPWR

Mfr. No:

DRV8300UDIPWR

Mfr.:

Texas Instruments

Description:

Motor/Motion/Ignition Controllers & Drivers 100-V max simple th ree-phase gate drive

Datasheet:

DRV8300UDIPWR Datasheet

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In Stock: 2.958

Stock:: 2.958 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,50 €	1,50 €
	0,955 €	9,55 €
	0,854 €	21,35 €
	0,703 €	70,30 €
	0,612 €	153,00 €
	0,581 €	290,50 €
	0,488 €	488,00 €
Full Reel (Order in multiples of 3000)
	0,445 €	1.335,00 €
	0,407 €	2.442,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Motor/Motion/Ignition Controllers & Drivers
RoHS:
Product:	Brushless DC Motor Controllers
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Mounting Style:	SMD/SMT
Package/Case:	TSSOP-20
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Moisture Sensitive:	Yes
Number of Outputs:	1 Output
Product Type:	Motor / Motion / Ignition Controllers & Drivers
Series:	DRV8300U
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs

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Datasheet

DRV8300UDIPWR Datasheet

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CNHTS:: 8542319099
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

DRV8300U Three-Phase Gate Driver

Texas Instruments DRV8300U Three-Phase Gate Driver is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.