DRV3245AEPHPRQ1

Texas Instruments
595-DRV3245AEPHPRQ1
DRV3245AEPHPRQ1

Mfr.:

Description:
Motor/Motion/Ignition Controllers & Drivers Automotive grade 0 1 2-V battery 3-phase

ECAD Model:
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In Stock: 1.000

Stock:
1.000 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
8,89 € 8,89 €
7,60 € 76,00 €
7,56 € 189,00 €
Full Reel (Order in multiples of 1000)
5,89 € 5.890,00 €
5,66 € 11.320,00 €
5.000 Quote
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Motor/Motion/Ignition Controllers & Drivers
RoHS:  
Brushless DC Motor Controllers
3 Phase
1 A
- 40 C
+ 150 C
SMD/SMT
HTQFP-48
AEC-Q100
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Moisture Sensitive: Yes
Number of Outputs: 6 Output
Operating Frequency: 20 kHz
Product Type: Motor / Motion / Ignition Controllers & Drivers
Series: DRV3245E
Factory Pack Quantity: 1000
Subcategory: PMIC - Power Management ICs
Supply Voltage - Max: 45 V
Supply Voltage - Min: 4.5 V
Unit Weight: 251,300 mg
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Compliance Codes
USHTS:
8542390090
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Taiwan
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

DRV3245E-Q1 3-phase Automotive Gate Driver Unit

Texas Instruments DRV3245E-Q1 3-phase Automotive Gate Driver Unit (GDU) offers high-performance current sensing for three-phase motor-drive applications. The DRV3245E-Q1 is intended for high-temperature automotive applications and is designed according to the applicable requirements of ISO 26262 for functional safety applications. The device features three half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET, concurrently providing enhanced FET protection and monitoring.