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CSD88539ND

Name: Texas Instruments CSD88539ND
Brand: Texas Instruments
SKU: 595-CSD88539ND
Price: 1.11 EUR
Availability: InStock

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Mouser No:

595-CSD88539ND

Mfr. No:

CSD88539ND

Mfr.:

Texas Instruments

Description:

MOSFETs 60-V Dual N-Channel Power MOSFET A 595-C A 595-CSD88539NDT

Datasheet:

CSD88539ND Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD88539ND

In Stock: 2.216

Stock:: 2.216 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,11 €	1,11 €
	0,694 €	6,94 €
	0,458 €	45,80 €
	0,366 €	183,00 €
	0,329 €	329,00 €
Full Reel (Order in multiples of 2500)
	0,295 €	737,50 €
	0,263 €	1.315,00 €
	0,251 €	2.510,00 €
	0,25 €	6.250,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD88539NDT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,31 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD88539NDT

Description:

MOSFETs 60V Dual NCh NexFET Pwr MOSFET A 595-CSD A 595-CSD88539ND

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	15 A
Rds On - Drain-Source Resistance:	28 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Qg - Gate Charge:	7.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.1 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Dual
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	CSD88539ND
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	5 ns
Unit Weight:	74 mg

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Datasheet

CSD88539ND Datasheet

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CSD88539ND Symbol & Footprint by SnapMagic

SPICE Models

Technical Resources

CSD88539ND TINA-TI Reference Design

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TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854239099
KRHTS:: 8541299000
MXHTS:: 8542399901
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.