It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD87355Q5D

Name: Texas Instruments CSD87355Q5D
Brand: Texas Instruments
SKU: 595-CSD87355Q5D
Price: 2.01 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

595-CSD87355Q5D

Mfr. No:

CSD87355Q5D

Mfr.:

Texas Instruments

Description:

MOSFETs 45A Sync Buck NexFET Power Block A 595-C A 595-CSD87355Q5DT

Datasheet:

CSD87355Q5D Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Texas Instruments CSD87355Q5D

In Stock: 2.705

Stock:: 2.705 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,01 €	2,01 €
	1,37 €	13,70 €
	1,15 €	115,00 €
	1,10 €	550,00 €
	1,01 €	1.010,00 €
Full Reel (Order in multiples of 2500)
	0,946 €	2.365,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD87355Q5DT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

3,57 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD87355Q5DT

Description:

MOSFETs 30-V N channel sync hronous buck NexFET A 595-CSD87355Q5D

Compare With Current Part

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	45 A
Rds On - Drain-Source Resistance:	3.9 mOhms, 900 uOhms
Vgs - Gate-Source Voltage:	- 8 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1 V, 750 mV
Qg - Gate Charge:	10.5 nC, 24.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	12 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Dual
Fall Time:	3 ns, 6 ns
Forward Transconductance - Min:	90 S, 151 S
Product Type:	MOSFETs
Rise Time:	18 ns, 14 ns
Series:	CSD87355Q5D
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	13 ns, 27 ns
Typical Turn-On Delay Time:	8 ns, 10 ns
Unit Weight:	161,600 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CSD87355Q5D Datasheet

SPICE Models

CSD87355Q5D PSpice Model (Rev. A)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.