CSD86330Q3D

Texas Instruments
595-CSD86330Q3D
CSD86330Q3D

Mfr.:

Description:
MOSFETs Sync Buck NexFET Pwr Block MOSFET

Datasheet:
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Learn more about Texas Instruments CSD86330Q3D

In Stock: 16.313

Stock:
16.313 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
2,30 € 2,30 €
1,52 € 15,20 €
1,11 € 111,00 €
0,929 € 464,50 €
0,886 € 886,00 €
Full Reel (Order in multiples of 2500)
0,788 € 1.970,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
LSON-CLIP-8
N-Channel
2 Channel
25 V
4.5 A
- 5 V, 5 V
2.1 V, 1.6 V
6.2 nC, 12 nC
- 55 C
+ 150 C
6 W
Enhancement
NexFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Dual
Development Kit: CSD86330EVM-717, TPS40322EVM-679
Fall Time: 1.9 ns, 4.2 ns
Forward Transconductance - Min: 52 S, 82 S
Product Type: MOSFETs
Rise Time: 7.5 ns, 6.3 ns
Series: CSD86330Q3D
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 8.5 ns, 15.8 ns
Typical Turn-On Delay Time: 4.9 ns, 5.3 ns
Unit Weight: 64 mg
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

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