It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD25402Q3A

Name: Texas Instruments CSD25402Q3A
Brand: Texas Instruments
SKU: 595-CSD25402Q3A
Price: 1.07 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

595-CSD25402Q3A

Mfr. No:

CSD25402Q3A

Mfr.:

Texas Instruments

Description:

MOSFETs P-CH Pwr MOSFET

Datasheet:

CSD25402Q3A Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Texas Instruments CSD25402Q3A

In Stock: 11.785

Stock:: 11.785 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,07 €	1,07 €
	0,671 €	6,71 €
	0,443 €	44,30 €
	0,344 €	172,00 €
	0,313 €	313,00 €
Full Reel (Order in multiples of 2500)
	0,278 €	695,00 €
	0,267 €	1.335,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD25402Q3AT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,45 €

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSONP-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	76 A
Rds On - Drain-Source Resistance:	8.9 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	650 mV
Qg - Gate Charge:	7.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 125 C
Pd - Power Dissipation:	69 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	CN
Country of Origin:	CN
Fall Time:	12 ns
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	CSD25402Q3A
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 P-Channel Power MOSFET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	10 ns
Unit Weight:	27,800 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

SPICE Models

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

CSD25402Q3A NexFET™ Power MOSFET

Texas Instruments CSD25402Q3A NexFET™ Power MOSFET is a 20V p-channel MOSFET designed to minimize losses in power conversion load management applications. The Texas Instruments CSD25402Q3A comes in a SON 3.3mm × 3.3mm package that offers excellent thermal performance for its size. Typical applications are DC-DC converters, battery management, load switches, and battery protection.