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CSD25213W10

Name: Texas Instruments CSD25213W10
Brand: Texas Instruments
SKU: 595-CSD25213W10
Price: 0.49 EUR
Availability: InStock

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Mouser No:

595-CSD25213W10

Mfr. No:

CSD25213W10

Mfr.:

Texas Instruments

Description:

MOSFETs P-CH NexFET Pwr MOSF ET

Datasheet:

CSD25213W10 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD25213W10

In Stock: 5.680

Stock:: 5.680 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,49 €	0,49 €
	0,30 €	3,00 €
	0,192 €	19,20 €
	0,144 €	72,00 €
	0,129 €	129,00 €
Full Reel (Order in multiples of 3000)
	0,108 €	324,00 €
	0,099 €	594,00 €
	0,084 €	756,00 €
	0,082 €	1.968,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DSBGA-4
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	1.6 A
Rds On - Drain-Source Resistance:	67 mOhms
Vgs - Gate-Source Voltage:	- 6 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	850 mV
Qg - Gate Charge:	2.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	PH
Country of Diffusion:	CN
Country of Origin:	PH
Fall Time:	970 ns
Product Type:	MOSFETs
Rise Time:	520 ns
Series:	CSD25213W10
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	1 us
Typical Turn-On Delay Time:	510 ns
Unit Weight:	1,100 mg

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Datasheet

CSD25213W10 Datasheet

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TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 8542399901
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET P-Channel Power MOSFETs

Texas Instruments NexFET P-Channel Power MOSFETs are designed to deliver the lowest on-resistance and gate charge in a small outline with excellent thermal characteristics in an ultra-low profile. These Texas Instruments NexFET MOSFETs feature ultra-low on-resistance, ultra-low Q_g and Q_gd, and a small footprint of 1.0mm x 1.5mm.