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CSD19505KTTT

Name: Texas Instruments CSD19505KTTT
Brand: Texas Instruments
SKU: 595-CSD19505KTTT
Price: 4.52 EUR
Availability: OutOfStock

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Mouser No:

595-CSD19505KTTT

Mfr. No:

CSD19505KTTT

Mfr.:

Texas Instruments

Description:

MOSFETs 80-V N channel NexF ET power MOSFET si A A 595-CSD19505KTT

Datasheet:

CSD19505KTTT Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD19505KTTT

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 6 Weeks Estimated factory production time.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 50)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	4,52 €	4,52 €
	2,47 €	24,70 €
Full Reel (Order in multiples of 50)
	2,47 €	123,50 €
	2,04 €	204,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD19505KTT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

3,52 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD19505KTT

Description:

MOSFETs 80V N-Channel NexFE T Power Mosfet A 595 A 595-CSD19505KTTT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	3.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Qg - Gate Charge:	76 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	3 ns
Forward Transconductance - Min:	262 S
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	CSD19505KTT
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	11 ns
Unit Weight:	2 g

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.