CSD17507Q5A

Texas Instruments
595-CSD17507Q5A
CSD17507Q5A

Mfr.:

Description:
MOSFETs 30V NChannel Hi Side NexFET Pwr MOSFET A A 595-CSD17579Q5A

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In Stock: 3.696

Stock:
3.696 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1,12 € 1,12 €
0,697 € 6,97 €
0,462 € 46,20 €
0,363 € 181,50 €
0,328 € 328,00 €
Full Reel (Order in multiples of 2500)
0,293 € 732,50 €
0,26 € 1.300,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Similar Product

Texas Instruments CSD17579Q5A
Texas Instruments
MOSFETs 30-V N channel NexF ET power MOSFET sin A 595-CSD17579Q5AT

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
VSONP-8
N-Channel
1 Channel
30 V
100 A
16.1 mOhms
- 20 V, 20 V
1.6 V
2.8 nC
- 55 C
+ 150 C
3 W
Enhancement
NexFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Forward Transconductance - Min: 16 S
Product Type: MOSFETs
Series: CSD17507Q5A
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 83,700 mg
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Attributes selected: 0

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TARIC:
8542399000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85423999
ECCN:
EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

CSD17507Q5A 30V N-Channel NexFET™ Power MOSFET

Texas Instruments CSD17507Q5A 30V N-Channel NexFET™ Power MOSFET has been designed to minimize losses in power conversion applications. The device features ultra-low Qg and Qgd, low-thermal resistance, and they are avalanche rated. The Texas Instruments CSD17507Q5A is ideal for Point-of-Load synchronous buck in networking, telecom, and computing systems and is optimized for control FET applications.

CSD17507Q5A NexFET™ Power MOSFETs

Texas Instruments CSD17507Q5A N-channel NexFETpower MOSFETs are 30V devices deisgned to minimize losses in power conversion applications. TI CSD17507Q5A NexFET power MOSFETs feature low thermal resistance as well as ultralow gate charge totla (Qg) and gate charge gate to drain (Qgd). The TI CSD17507Q5A has a 1.6V threshold voltage. These TI NexFET power MOSFETs are optimized for control FET applications and are also ideal for point-of-load synchronous buck in networking, telecom, and computing systems.