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CSD17505Q5A

Name: Texas Instruments CSD17505Q5A
Brand: Texas Instruments
SKU: 595-CSD17505Q5A
Price: 2.06 EUR
Availability: OutOfStock

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Mouser No:

595-CSD17505Q5A

Mfr. No:

CSD17505Q5A

Mfr.:

Texas Instruments

Description:

MOSFETs 30V NCh NexFET Power MOSFET A 595-CSD175 A 595-CSD17581Q5A

Datasheet:

CSD17505Q5A Datasheet

ECAD Model:

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Availability

Stock:: 0

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Factory Lead Time:: 12 Weeks Estimated factory production time.

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,06 €	2,06 €
	1,32 €	13,20 €
	0,903 €	90,30 €
	0,72 €	360,00 €
	0,685 €	685,00 €
Full Reel (Order in multiples of 2500)
	0,599 €	1.497,50 €
	0,598 €	2.990,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD17581Q5A

Description:

MOSFETs 30-V N channel NexF ET power MOSFET si A A 595-CSD17581Q5AT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSONP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	4.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Qg - Gate Charge:	10 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.2 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	6.1 ns
Product Type:	MOSFETs
Rise Time:	11.5 ns
Series:	CSD17505Q5A
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	330 mg

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TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 8542399901
ECCN:: EAR99

CSD17505Q5A 30V, NexFET™ Power MOSFET

Texas Instruments CSD17505Q5A 30V, N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications. TI CSD17505Q5A N-Channel NexFET Power MOSFET features ultralow gate charge total (4.5V) of 10nC (typical) and ultralow gate charge gate to drain of 2.7nC (typical). TI CSD17505Q5A NexFET Power MOSFET offers low thermal resistance and are optimized for control and synchronous FET applications. They are also ideal for point-of-load synchronous buck in networking, telecom, and computing systems.
Learn More

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.