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CSD17313Q2

Name: Texas Instruments CSD17313Q2
Brand: Texas Instruments
SKU: 595-CSD17313Q2
Price: 0.66 EUR
Availability: InStock

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Mouser No:

595-CSD17313Q2

Mfr. No:

CSD17313Q2

Mfr.:

Texas Instruments

Description:

MOSFETs 30V N Channel NexFET Power MOSFET A 595- A 595-CSD17313Q2T

Datasheet:

CSD17313Q2 Datasheet

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More Information

Learn more about Texas Instruments CSD17313Q2

In Stock: 8.892

Stock:: 8.892

Can Dispatch Immediately

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On Order:: 9.000

Expected 3/3/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,662 €	0,66 €
	0,418 €	4,18 €
	0,275 €	27,50 €
	0,224 €	112,00 €
	0,18 €	180,00 €
Full Reel (Order in multiples of 3000)
	0,16 €	480,00 €
	0,149 €	894,00 €
	0,122 €	1.098,00 €
	0,12 €	2.880,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD17313Q2T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,07 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD17313Q2T

Description:

MOSFETs 30V N-Channel NexFE T Power Mosfet A 595 A 595-CSD17313Q2

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WSON-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	5 A
Rds On - Drain-Source Resistance:	30 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	2.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	17 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Development Kit:	TMDSCSK388, TMDSCSK8127
Fall Time:	1.3 ns
Product Type:	MOSFETs
Rise Time:	3.9 ns
Series:	CSD17313Q2
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	4.2 ns
Typical Turn-On Delay Time:	2.8 ns
Unit Weight:	8,700 mg

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Power Management Guide 2018 (Rev. R)

SPICE Models

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

CSD17303Q5 / CSD17313Q2 NexFET™ Power MOSFET

The Texas Instruments CSD17303Q5 and CSD17313Q2 30V N-Channel NexFET™ Power MOSFETs are designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The TI CSD17303Q5 and TI CSD17313Q2 NexFET Power MOSFETs feature ultralow Qg and Qgd as well as low thermal resistance.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.