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CSD16327Q3T

Name: Texas Instruments CSD16327Q3T
Brand: Texas Instruments
SKU: 595-CSD16327Q3T
Price: 1.33 EUR
Availability: InStock

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Mouser No:

595-CSD16327Q3T

Mfr. No:

CSD16327Q3T

Mfr.:

Texas Instruments

Description:

MOSFETs 25-V N channel NexF ET power MOSFET si A A 595-CSD16327Q3

Datasheet:

CSD16327Q3T Datasheet

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More Information

Learn more about Texas Instruments CSD16327Q3T

In Stock: 2.791

Stock:: 2.791 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,33 €	1,33 €
	1,03 €	10,30 €
	0,608 €	60,80 €
Full Reel (Order in multiples of 250)
	0,608 €	152,00 €
	0,519 €	259,50 €
	0,491 €	491,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD16327Q3

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,43 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD16327Q3

Description:

MOSFETs N-Channel NexFET Pwr MOSFET A 595-CSD163 A 595-CSD16327Q3T

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	4.8 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Qg - Gate Charge:	8.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	74 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	6.3 ns
Forward Transconductance - Min:	96 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	CSD16327Q3
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	5.3 ns
Unit Weight:	44,500 mg

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Datasheet

CSD16327Q3T Datasheet

Application Notes

Models

CSD16327Q3T Symbol & Footprint by SnapMagic

Product Catalogs

Power Management Guide 2018 (Rev. R)

SPICE Models

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.