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CSD13306WT

Name: Texas Instruments CSD13306WT
Brand: Texas Instruments
SKU: 595-CSD13306WT
Price: 0.71 EUR
Availability: InStock

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Mouser No:

595-CSD13306WT

Mfr. No:

CSD13306WT

Mfr.:

Texas Instruments

Description:

MOSFETs 12V N-Channel NexFET Power MOSFET A 595- A 595-CSD13306W

Datasheet:

CSD13306WT Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD13306WT

In Stock: 492

Stock:: 492 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,714 €	0,71 €
	0,544 €	5,44 €
	0,414 €	41,40 €
Full Reel (Order in multiples of 250)
	0,414 €	103,50 €
	0,396 €	198,00 €
	0,391 €	391,00 €
	0,36 €	900,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD13306W

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

0,59 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD13306W

Description:

MOSFETs 12-V N channel NexF ET power MOSFET sin A 595-CSD13306WT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DSBGA-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	3.5 A
Rds On - Drain-Source Resistance:	10.2 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	700 mV
Qg - Gate Charge:	11.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.9 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	15 S
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	11 ns
Series:	CSD13306W
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	7 ns
Unit Weight:	1,700 mg

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Datasheet

CSD13306WT Datasheet

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Mechanical Outline Drawing

PCN

SPICE Models

CSD13306W PSpice Model (Rev. A)

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TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8542390000
USHTS:: 8541290065
JPHTS:: 854239099
MXHTS:: 8542399901
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.