TSM60NB190CI

Taiwan Semiconductor
821-TSM60NB190CI
TSM60NB190CI

Mfr.:

Description:
MOSFETs 600V Power MOSFET Superjunction N-chan

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 4000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,65 € 6.600,00 €

Product Attribute Attribute Value Select Attribute
Taiwan Semiconductor
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
600 V
18 A
170 mOhms
- 30 V, 30 V
2 V
31 nC
- 55 C
+ 150 C
33.8 W
Enhancement
Tube
Brand: Taiwan Semiconductor
Configuration: Single
Fall Time: 21 ns
Product Type: MOSFETs
Rise Time: 21 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 95 ns
Typical Turn-On Delay Time: 36 ns
Unit Weight: 2 g
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Attributes selected: 0

Datasheet

Compliance Codes
TARIC:
8541100000
CNHTS:
8541290000
CAHTS:
8541100090
USHTS:
8541290065
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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