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TSM300NB06DCR RLG

Name: Taiwan Semiconductor TSM300NB06DCR RLG
Brand: Taiwan Semiconductor
SKU: 821-TSM300NB06DCRRLG
Price: 1.39 EUR
Availability: InStock

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Mouser No:

821-TSM300NB06DCRRLG

Mfr. No:

TSM300NB06DCR RLG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 60V, 25A, Dual N-Channel Power MOSFET

Datasheet:

TSM300NB06DCR RLG Datasheet

ECAD Model:

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More Information

Learn more about Taiwan Semiconductor TSM300NB06DCR RLG

In Stock: 4.676

Stock:: 4.676 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,39 €	1,39 €
	0,886 €	8,86 €
	0,588 €	58,80 €
	0,463 €	231,50 €
	0,422 €	422,00 €
Full Reel (Order in multiples of 2500)
	0,384 €	960,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PDFN-56-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	30 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Taiwan Semiconductor
Configuration:	Dual
Fall Time:	2 ns
Forward Transconductance - Min:	24 S
Product Type:	MOSFETs
Rise Time:	3 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	6 ns
Part # Aliases:	TSM300NB06DCR
Unit Weight:	372,608 mg

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Datasheet

TSM300NB06DCR RLG Datasheet

Models

SPICE Models

SPICE Model

RoHS Certificate (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Dual N-Channel Power MOSFETs

Taiwan Semiconductor Dual N-Channel Power MOSFETs feature low drain-source on-state resistance, minimizing conductive losses. The devices enable a low gate charge for fast switching. Taiwan Semiconductor Dual N-Channel Power MOSFETs are ideal for BLDC motor control, battery power management, and DC-DC converter applications.