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TSM150NB04DCR RLG

Name: Taiwan Semiconductor TSM150NB04DCR RLG
Brand: Taiwan Semiconductor
SKU: 821-TSM150NB04DCRRLG
Price: 1.49 EUR
Availability: InStock

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Mouser No:

821-TSM150NB04DCRRLG

Mfr. No:

TSM150NB04DCR RLG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 40V, 38A, Dual N-Channel Power MOSFET

Datasheet:

TSM150NB04DCR RLG Datasheet

ECAD Model:

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More Information

Learn more about Taiwan Semiconductor TSM150NB04DCR RLG

In Stock: 4.964

Stock:: 4.964 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 4964 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,49 €	1,49 €
	0,946 €	9,46 €
	0,629 €	62,90 €
	0,503 €	251,50 €
	0,454 €	454,00 €
Full Reel (Order in multiples of 2500)
	0,409 €	1.022,50 €
	0,384 €	1.920,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PDFN-56-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	15 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	18 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Taiwan Semiconductor
Configuration:	Dual
Fall Time:	3 ns
Forward Transconductance - Min:	32 S
Product Type:	MOSFETs
Rise Time:	7 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	6 ns
Part # Aliases:	TSM150NB04DCR
Unit Weight:	372,608 mg

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Datasheet

TSM150NB04DCR RLG Datasheet

Models

SPICE Models

SPICE Model (Text)

RoHS Certificate (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Dual N-Channel Power MOSFETs

Taiwan Semiconductor Dual N-Channel Power MOSFETs feature low drain-source on-state resistance, minimizing conductive losses. The devices enable a low gate charge for fast switching. Taiwan Semiconductor Dual N-Channel Power MOSFETs are ideal for BLDC motor control, battery power management, and DC-DC converter applications.