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TSM110NB04DCR RLG

Name: Taiwan Semiconductor TSM110NB04DCR RLG
Brand: Taiwan Semiconductor
SKU: 821-TSM110NB04DCRRLG
Price: 1.63 EUR
Availability: InStock

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Mouser No:

821-TSM110NB04DCRRLG

Mfr. No:

TSM110NB04DCR RLG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 40V, 48A, Dual N-Channel Power MOSFET

Datasheet:

TSM110NB04DCR RLG Datasheet

ECAD Model:

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Learn more about Taiwan Semiconductor TSM110NB04DCR RLG

In Stock: 3.895

Stock:: 3.895 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,63 €	1,63 €
	1,04 €	10,40 €
	0,698 €	69,80 €
	0,551 €	275,50 €
	0,505 €	505,00 €
Full Reel (Order in multiples of 2500)
	0,452 €	1.130,00 €
	0,405 €	2.025,00 €
	0,399 €	3.990,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PDFN-56-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	48 A
Rds On - Drain-Source Resistance:	11 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	48 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Taiwan Semiconductor
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	5 ns
Forward Transconductance - Min:	40 S
Product Type:	MOSFETs
Rise Time:	10 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	TSM110NB04DCR
Unit Weight:	372,608 mg

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Datasheet

TSM110NB04DCR RLG Datasheet

Models

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RoHS Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Dual N-Channel Power MOSFETs

Taiwan Semiconductor Dual N-Channel Power MOSFETs feature low drain-source on-state resistance, minimizing conductive losses. The devices enable a low gate charge for fast switching. Taiwan Semiconductor Dual N-Channel Power MOSFETs are ideal for BLDC motor control, battery power management, and DC-DC converter applications.