TSCDT10065G1

Taiwan Semiconductor
821-TSCDT10065G1
TSCDT10065G1

Mfr.:

Description:
SiC Schottky Diodes 10A, 650V, SiC Schottky Diode

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 977

Stock:
977 Can Dispatch Immediately
Factory Lead Time:
35 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,94 € 3,94 €
2,48 € 24,80 €
2,27 € 227,00 €
2,06 € 1.030,00 €

Product Attribute Attribute Value Select Attribute
Taiwan Semiconductor
Product Category: SiC Schottky Diodes
RoHS:  
REACH - SVHC:
Through Hole
TO-220AC-2
Single
10 A
650 V
1.34 V
84 A
20 uA
- 55 C
+ 175 C
Tube
Brand: Taiwan Semiconductor
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 2000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 455 V
Unit Weight: 2,030 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

TARIC:
8541100000
USHTS:
8541100080
ECCN:
EAR99

TSCD 650V SiC Schottky Diodes

Taiwan Semiconductor TSCD 650V SiC Schottky Diodes feature a maximum junction temperature of +175°C and ensure robust performance under challenging conditions. Taiwan Semiconductor TSCD diodes have an MPS structure that enhances ruggedness to forward current surge events, making them suitable for high-demand scenarios. These diodes facilitate high-speed switching and boast a high forward surge capability, enabling efficient operation in various power supply systems. Additionally, the positive temperature coefficient on VF ensures stability across temperature ranges.