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GP2T080A120J

Name: SemiQ GP2T080A120J
Brand: SemiQ
SKU: 148-GP2T080A120J
Price: 6.48 EUR
Availability: InStock

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Mouser No:

148-GP2T080A120J

Mfr. No:

GP2T080A120J

Mfr.:

SemiQ

Description:

SiC MOSFETs 1200V, 80mOhm, TO-263-7L MOSFET

Datasheet:

GP2T080A120J Datasheet (PDF)

ECAD Model:

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In Stock: 6

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,48 €	6,48 €
	4,58 €	45,80 €
	3,80 €	380,00 €
	3,39 €	1.695,00 €
	3,17 €	3.170,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	35 A
Rds On - Drain-Source Resistance:	77 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	53 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Brand:	SemiQ
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	8 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	3 ns
Series:	GP2T020A120
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	10 ns

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Datasheet

GP2T080A120J Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GP2T080A120H 1200V SiC MOSFET

SemiQ GP2T080A120H 1200V SiC MOSFET delivers lower capacitance and higher system efficiency. The GP2T080A120H features high-speed switching, a driver source pin for gate driving, and a reliable body diode. The GP2T080A120H 1200V SiC MOSFET parts are tested to above 1400V and avalanche tested to 200mJ. Furthermore, the GP2T080A120H s easy to parallel and offers a lower Qg. The device is ideal for solar inverters, EV charging stations, induction heating and welding, and motor drivers.