SDS120J015C3-ISATH

Sanan Semiconductor
896-SDS120J015C3ISAT
SDS120J015C3-ISATH

Mfr.:

Description:
SiC Schottky Diodes 1200V 15A, TO220-2L, Industrial Grade

Datasheet:
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In Stock: 40

Stock:
40 Can Dispatch Immediately
Quantities greater than 40 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,41 € 5,41 €
3,03 € 30,30 €
2,83 € 283,00 €
2,71 € 1.355,00 €
2,67 € 2.670,00 €

Product Attribute Attribute Value Select Attribute
Sanan Semiconductor
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220-2L
Single
15 A
1.2 kV
1.35 V
140 A
45 uA
- 55 C
+ 175 C
Tube
Brand: Sanan Semiconductor
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
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Attributes selected: 0

Datasheet

Compliance Codes
TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Silicon Carbide Schottky Barrier Diodes

Sanan Semiconductor Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are developed using Sanan’s advanced 3rd generation SiC SBD technology with high performance and reliability. These SBDs register higher efficiency, higher operation temperatures, and lower losses and operate at higher frequencies than Si-based solutions. The Schottky structure shows no recovery at turn-off and allows a low leakage current with a reverse voltage of up to 1200V. It can contribute to system miniaturization and achieve lightweight system design. Using RoHS-compliant components, the Sanan Semiconductor SiC SBDs are qualified for industrial applications.

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