STWA40N95DK5

STMicroelectronics
511-STWA40N95DK5
STWA40N95DK5

Mfr.:

Description:
MOSFETs N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 long l

ECAD Model:
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In Stock: 600

Stock:
600 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
13,25 € 13,25 €
8,14 € 81,40 €
7,23 € 723,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
950 V
38 A
120 mOhms
- 30 V, 30 V
3 V
100 nC
- 55 C
+ 150 C
450 W
Enhancement
MDmesh
Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 11 ns
Product Type: MOSFETs
Rise Time: 15 ns
Series: STWA40N95DK5
Factory Pack Quantity: 600
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 82 ns
Typical Turn-On Delay Time: 30 ns
Unit Weight: 6 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

MDmesh DK5 MOSFETs

STMicroelectronics MDmesh DK5 MOSFETs are very-high voltage fast recovery diodes with a 950V to 1050V breakdown voltage. The DK5 has a very low gate charge, as low as 45nC, and a reverse recovery time (trr) of 250ns (typ.). This makes the MDmesh DK5 ideal for ZVS LLC resonant converters in high-power applications. These applications include industrial welders, plasma generators, high-frequency induction melting/heating, and X-ray machines.