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STW70N60DM2

Name: STMicroelectronics STW70N60DM2
Brand: STMicroelectronics
SKU: 511-STW70N60DM2
Price: 9.37 EUR
Availability: InStock

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Mouser No:

511-STW70N60DM2

Mfr. No:

STW70N60DM2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package

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Datasheet:

STW70N60DM2 Datasheet (PDF)

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In Stock: 832

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	9,37 €	9,37 €
	5,60 €	56,00 €
	5,07 €	507,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	66 A
Rds On - Drain-Source Resistance:	42 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	121 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	446 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	10.4 ns
Product Type:	MOSFETs
Rise Time:	67 ns
Series:	STW70N60DM2
Factory Pack Quantity:	600
Subcategory:	Transistors
Typical Turn-Off Delay Time:	112 ns
Typical Turn-On Delay Time:	32 ns
Unit Weight:	6 g

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Datasheet

STW70N60DM2 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.