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STW38N65M5-4

Name: STMicroelectronics STW38N65M5-4
Brand: STMicroelectronics
SKU: 511-STW38N65M5-4
Price: 6.47 EUR
Availability: InStock

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Mouser No:

511-STW38N65M5-4

Mfr. No:

STW38N65M5-4

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 packag

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STW38N65M5-4 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 525

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Pricing (EUR)

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	6,47 €	6,47 €
	3,85 €	38,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	95 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	71 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	9 ns
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	Mdmesh M5
Factory Pack Quantity:	600
Subcategory:	Transistors
Unit Weight:	6 g

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Filter Document:

Datasheet

STW38N65M5-4 Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-4-3 (PDF)

Compliance Codes

TARIC:: 8542319000
CNHTS:: 8541290000
CAHTS:: 8542310000
USHTS:: 8541290065
MXHTS:: 8542310302
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding R_DS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.