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STW34N65M5

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See Product Specifications

Mouser No:

511-STW34N65M5

Mfr. No:

STW34N65M5

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 650 V 0.098 Ohm 29 A MDmesh M5

Complete Your Design

Lifecycle:

Obsolete

Datasheet:

STW34N65M5 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Delivery Restriction:

Mouser does not presently sell this product in your region.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	18.3 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	62.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Product Type:	MOSFETs
Series:	Mdmesh M5
Factory Pack Quantity:	600
Subcategory:	Transistors
Unit Weight:	6 g

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Filter Document:

Datasheet

STW34N65M5 Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-4-3 (PDF)

PCN

Compliance Codes

TARIC:: 8541210000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.