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STU7N65M2

Name: STMicroelectronics STU7N65M2
Brand: STMicroelectronics
SKU: 511-STU7N65M2
Price: 1.74 EUR
Availability: InStock

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Mouser No:

511-STU7N65M2

Mfr. No:

STU7N65M2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a IPAK package

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STU7N65M2 Datasheet (PDF)

ECAD Model:

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In Stock: 1.141

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Quantities greater than 1141 will be subject to minimum order requirements.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,74 €	1,74 €
	1,11 €	11,10 €
	0,766 €	76,60 €
	0,649 €	324,50 €
	0,561 €	561,00 €
	0,516 €	1.548,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-251-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	5 A
Rds On - Drain-Source Resistance:	1.15 Ohms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	60 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	20 ns
Product Type:	MOSFETs
Rise Time:	20 ns
Series:	STU7N65M2
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	8 ns
Unit Weight:	340 mg

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ST NCNR & NON Warrantied

Stock on hand has no manufacture warranty.

If the end customer requires additional support please
process the request through your local Mouser
sales representative.

5-1013-36

Filter Document:

Datasheet

STU7N65M2 Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-4-3 (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.