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STPSC30G12WLY

Name: STMicroelectronics STPSC30G12WLY
Brand: STMicroelectronics
SKU: 511-STPSC30G12WLY
Price: 14.95 EUR
Availability: InStock

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Mouser No:

511-STPSC30G12WLY

Mfr. No:

STPSC30G12WLY

Mfr.:

STMicroelectronics

Description:

SiC Schottky Diodes Automotive 1200 V, 30 A Silicon Carbide Diode

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Datasheet:

STPSC30G12WLY Datasheet (PDF)

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In Stock: 525

Stock:: 525 Can Dispatch Immediately

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Factory Lead Time:: 25 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	14,95 €	14,95 €
	9,72 €	97,20 €
	9,71 €	5.826,00 €
	8,57 €	10.284,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	DO-247-2
Configuration:	Single
If - Forward Current:	30 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.35 V
Ifsm - Forward Surge Current:	250 A
Ir - Reverse Current:	15 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	600
Subcategory:	Diodes & Rectifiers
Unit Weight:	6 g

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Datasheet

STPSC30G12WLY Datasheet (PDF)

PCN

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TARIC:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
ECCN:: EAR99

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

STPSC30G12 Silicon Carbide Power Schottky Diodes

STMicroelectronics STPSC30G12 Silicon Carbide Power Schottky Diodes are in a DO-247 package with long leads. The STMicroelectronics STPSC30G12 is an ultrahigh performance power Schottky rectifier manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200V rating. Thanks to the Schottky construction, no recovery is shown during turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.