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Mfr.	Mfr. No:	Qty	Ext Total

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STPSC20H065CT

STMicroelectronics

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See Product Specifications

Mouser No:

511-STPSC20H065CT

Mfr. No:

STPSC20H065CT

Mfr.:

STMicroelectronics

Description:

SiC Schottky Diodes 650 V, 20 A dual High Surge Silicon Carbide Power Schottky Diode

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STPSC20H065CT Datasheet (PDF)

ECAD Model:

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In Stock: 679

Stock:: 679 Can Dispatch Immediately

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Quantities greater than 679 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,29 €	6,29 €
	4,69 €	46,90 €
	3,79 €	379,00 €
	3,37 €	1.685,00 €
	3,02 €	3.020,00 €
	3,01 €	6.020,00 €
10.000	Quote

Similar Product

STMicroelectronics STPSC20H065CTY

Mfr.:

STMicroelectronics

Mfr. No:

STPSC20H065CTY

Description:

SiC Schottky Diodes Automotive 650 V, 20 A High Surge Silicon Carbide Power Schottky Diode

Lifecycle:

End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC Schottky Diodes
RoHS:
Package/Case:	TO-220-3
Series:	STPSC20H065C
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	1000
Subcategory:	Diodes & Rectifiers
Unit Weight:	44,300 g

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Attributes selected: 0

Filter Document:

Datasheet

STPSC20H065CT Datasheet (PDF)

EOL

Product Discontinuance Notification (PDF)

PCN

TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100101
ECCN:: EAR99

FEATURED PRODUCTS

STMICROELECTRONICS

STPSC Schottky Silicon-Carbide Diodes

Superior physical characteristics over standard silicon, with 15% less forward voltage.

600V Power Schottky Silicon Carbide Diode

Ultrahigh performance power schottky diode manufactured using a silicon carbide substrate.

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