STPSC20G12L2Y

STMicroelectronics
511-STPSC20G12L2Y
STPSC20G12L2Y

Mfr.:

Description:
SiC Schottky Diodes Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
305
Expected 3/16/2026
600
Expected 12/14/2026
Factory Lead Time:
15
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 600)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
10,60 € 10,60 €
8,63 € 86,30 €
7,20 € 720,00 €
Full Reel (Order in multiples of 600)
6,41 € 3.846,00 €
5,45 € 6.540,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC Schottky Diodes
RoHS:  
SMD/SMT
HU3PAK-9
Single
20 A
1.2 kV
1.35 V
1.1 kA
10 uA
- 55 C
+ 175 C
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 600
Subcategory: Diodes & Rectifiers
Unit Weight: 2,320 g
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TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

STPSC20G12 Silicon Carbide Power Schottky Diodes

STMicroelectronics STPSC20G12 Silicon Carbide Power Schottky Diodes are available in a DO-247 package with long leads. The STMicroelectronics STPSC20G12 is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200V rating. Thanks to the Schottky construction, no recovery is shown during turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.