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STPSC20G065WL

Name: STMicroelectronics STPSC20G065WL
Brand: STMicroelectronics
SKU: 511-STPSC20G065WL
Price: 4.51 EUR
Availability: InStock

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Mouser No:

511-STPSC20G065WL

Mfr. No:

STPSC20G065WL

Mfr.:

STMicroelectronics

Description:

SiC Schottky Diodes 650 V, 20A High surge Silicon Carbide power Schottky diode

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STPSC20G065WL Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STPSC20G065WL

In Stock: 593

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Factory Lead Time:: 25 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,51 €	4,51 €
	3,00 €	30,00 €
	2,43 €	243,00 €
	2,16 €	1.296,00 €
	1,84 €	2.208,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	DO-247-2
Configuration:	Single
If - Forward Current:	20 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.3 V
Ifsm - Forward Surge Current:	135 A
Ir - Reverse Current:	17 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	600
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V
Unit Weight:	6 g

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Datasheet

STPSC20G065WL Datasheet (PDF)

PCN

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TARIC:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
ECCN:: EAR99

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.