STP80N900K6

STMicroelectronics
511-STP80N900K6
STP80N900K6

Mfr.:

Description:
MOSFETs N-channel 800 V, 750 mOhm typ., 6 A MDmesh K6 Power MOSFET in a TO-220 package
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Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
13 Weeks Estimated factory production time.
Minimum: 1000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,728 € 728,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
1 Channel
800 V
6 A
900 mOhms
- 30 V, 30 V
3.5 V
7 nC
- 55 C
+ 150 C
68 W
Enhancement
Tube
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 13 ns
Product Type: MOSFETs
Rise Time: 5.4 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 23.8 ns
Typical Turn-On Delay Time: 8.1 ns
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Attributes selected: 0

Datasheet

PCN

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

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