STP80N600K6

STMicroelectronics
511-STP80N600K6
STP80N600K6

Mfr.:

Description:
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
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Datasheet:
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In Stock: 828

Stock:
828 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,90 € 2,90 €
1,47 € 14,70 €
1,35 € 135,00 €
1,10 € 550,00 €
0,929 € 929,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
- 55 C
+ 150 C
Tube
Brand: STMicroelectronics
Channel Mode: Enhancement
Fall Time: 12.6 ns
Id - Continuous Drain Current: 7 A
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package/Case: TO-220-3
Pd - Power Dissipation: 86 W
Product Type: MOSFETs
Qg - Gate Charge: 10.7 nC
Rds On - Drain-Source Resistance: 600 mOhms
Rise Time: 4.1 ns
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 28.2 ns
Typical Turn-On Delay Time: 9 ns
Vds - Drain-Source Breakdown Voltage: 800 V
Vgs - Gate-Source Voltage: - 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Unit Weight: 2 g
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Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STP80N600K6 MDmesh K6 Power MOSFET

STMicroelectronics STP80N600K6 MDmesh K6 Power MOSFET offers a very high voltage, N-channel power solution utilizing the ultimate MDmesh K6 technology. This K6 technology is based on 20 years of STMicroelectronics experience in super junction technology. The result of this technology allows the STMicro STP80N600K6 to feature best-in-class on-resistance per area and gate charge for applications demanding superior power density and high efficiency.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

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