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STP80N1K1K6

Name: STMicroelectronics STP80N1K1K6
Brand: STMicroelectronics
SKU: 511-STP80N1K1K6
Price: 2.19 EUR
Availability: InStock

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Mouser No:

511-STP80N1K1K6

Mfr. No:

STP80N1K1K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET

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Datasheet:

STP80N1K1K6 Datasheet (PDF)

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In Stock: 1.060

Stock:: 1.060 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,19 €	2,19 €
	1,41 €	14,10 €
	0,963 €	96,30 €
	0,77 €	385,00 €
	0,731 €	731,00 €
	0,655 €	1.310,00 €
	0,599 €	2.995,00 €
	0,598 €	5.980,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Factory Pack Quantity:	1000
Subcategory:	Transistors
Unit Weight:	2 g

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Datasheet

STP80N1K1K6 Datasheet (PDF)

PCN

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

STP80N1K1K6 N-Channel Power MOSFET

STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology. The STMicroelectronics STP80N1K1K6 MOSFET offers top-notch on-resistance per area and gate charge. The device is ideal for high-power density and efficient applications.