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STP46NF30

Name: STMicroelectronics STP46NF30
Brand: STMicroelectronics
SKU: 511-STP46NF30
Price: 3.53 EUR
Availability: InStock

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Mouser No:

511-STP46NF30

Mfr. No:

STP46NF30

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 300V 0.063Ohm 42A pwr MOSFET

Complete Your Design

Datasheet:

STP46NF30 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STP46NF30

In Stock: 1.250

Stock:: 1.250

Can Dispatch Immediately

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On Order:: 1.000

Expected 4/13/2026
Factory Lead Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,53 €	3,53 €
	1,81 €	18,10 €
	1,75 €	175,00 €
	1,34 €	670,00 €
	1,25 €	1.250,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	300 V
Id - Continuous Drain Current:	42 A
Rds On - Drain-Source Resistance:	63 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	90 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	STripFET
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	46 ns
Product Type:	MOSFETs
Rise Time:	38 ns
Series:	STP46NF30
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	2 g

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Datasheet

STP46NF30 Datasheet (PDF)

PCN

TARIC:: 8541210000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412101
ECCN:: EAR99

STripFET II™ Power MOSFETs

STMicroelectronics STripFET II™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET™ technology with a gate structure. The resulting STripFET™ Power MOSFET exhibits a high current and low R_DS(on). These Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density. These STripFET™ Power MOSFETs are a well-established planar technology for high-efficiency, low-voltage systems.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.