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STP28NM60ND

Name: STMicroelectronics STP28NM60ND
Brand: STMicroelectronics
SKU: 511-STP28NM60ND
Price: 5.13 EUR
Availability: InStock

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Mouser No:

511-STP28NM60ND

Mfr. No:

STP28NM60ND

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V 0 120 Ohm typ 24 A

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Datasheet:

STP28NM60ND Datasheet (PDF)

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In Stock: 990

Stock:: 990 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,13 €	5,13 €
	2,73 €	27,30 €
	2,57 €	257,00 €
	2,37 €	1.185,00 €
	2,20 €	2.200,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	23 A
Rds On - Drain-Source Resistance:	150 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	62.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	27 ns
Product Type:	MOSFETs
Rise Time:	21.5 ns
Series:	STP28NM60ND
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	92 ns
Typical Turn-On Delay Time:	23.5 ns
Unit Weight:	2 g

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Datasheet

STP28NM60ND Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

N-Channel FDmesh Power MOSFETs

STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These MOSFETs feature fast recovery, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.