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STP220N6F7

Name: STMicroelectronics STP220N6F7
Brand: STMicroelectronics
SKU: 511-STP220N6F7
Price: 2.51 EUR
Availability: OutOfStock

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Mouser No:

511-STP220N6F7

Mfr. No:

STP220N6F7

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 60 V, 2,1 Ohm typ., 120 A, STripFET F7 Power MOSFET in a TO-220 packag

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Datasheet:

STP220N6F7 Datasheet (PDF)

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Availability

Stock:: 0

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On Order:: 1.000

Expected 4/6/2026
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,51 €	2,51 €
	1,25 €	12,50 €
	1,13 €	113,00 €
	0,912 €	456,00 €
	0,845 €	845,00 €
	0,814 €	1.628,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	2.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	100 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	237 W
Channel Mode:	Enhancement
Tradename:	STripFET
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	29 ns
Product Type:	MOSFETs
Rise Time:	103 ns
Series:	STP220N6F7
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	54 ns
Typical Turn-On Delay Time:	33 ns
Unit Weight:	2 g

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Datasheet

STP220N6F7 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.