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STP18N60DM2

Name: STMicroelectronics STP18N60DM2
Brand: STMicroelectronics
SKU: 511-STP18N60DM2
Price: 2.73 EUR
Availability: InStock

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Mouser No:

511-STP18N60DM2

Mfr. No:

STP18N60DM2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 packag

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Datasheet:

STP18N60DM2 Datasheet (PDF)

ECAD Model:

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In Stock: 1.235

Stock:: 1.235 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,73 €	2,73 €
	1,44 €	14,40 €
	1,30 €	130,00 €
	1,07 €	535,00 €
	0,92 €	920,00 €
	0,886 €	1.772,00 €
	0,877 €	8.770,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	260 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	90 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	32.5 ns
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	STP18N60DM2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	9.5 ns
Typical Turn-On Delay Time:	13.5 ns
Unit Weight:	2 g

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Datasheet

STP18N60DM2 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.