STP140N6F7

STMicroelectronics
511-STP140N6F7
STP140N6F7

Mfr.:

Description:
MOSFETs N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 6.637

Stock:
6.637 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,33 € 2,33 €
1,01 € 10,10 €
0,937 € 93,70 €
0,829 € 414,50 €
0,727 € 727,00 €
0,724 € 1.448,00 €
0,719 € 3.595,00 €
0,711 € 7.110,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
60 V
80 A
3 mOhms
- 20 V, 20 V
2 V
40 nC
- 55 C
+ 175 C
110 W
Enhancement
STripFET
Tube
Brand: STMicroelectronics
Configuration: Single
Product Type: MOSFETs
Series: STP140N6F7
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 2 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.