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STP100N6F7

Name: STMicroelectronics STP100N6F7
Brand: STMicroelectronics
SKU: 511-STP100N6F7
Price: 1.71 EUR
Availability: InStock

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Mouser No:

511-STP100N6F7

Mfr. No:

STP100N6F7

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 packag

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Datasheet:

STP100N6F7 Datasheet (PDF)

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In Stock: 1.119

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Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,71 €	1,71 €
	0,972 €	9,72 €
	0,739 €	73,90 €
	0,627 €	313,50 €
	0,534 €	534,00 €
	0,498 €	996,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	5.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	30 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Tradename:	STripFET
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	15 ns
Product Type:	MOSFETs
Rise Time:	55.5 ns
Series:	STP100N6F7
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	28.6 ns
Typical Turn-On Delay Time:	21.6 ns
Unit Weight:	2 g

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Datasheet

STP100N6F7 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

STripFET VI™ Power MOSFETs

STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with an updated gate structure. The resulting STripFET Power MOSFET uses a trench technology for high efficiency and low R_DS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers, and solar. These STMicroelectronics MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.