It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STO36N60M6

Name: STMicroelectronics STO36N60M6
Brand: STMicroelectronics
SKU: 511-STO36N60M6
Price: 5.19 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STO36N60M6

Mfr. No:

STO36N60M6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET

Complete Your Design

Datasheet:

STO36N60M6 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STO36N60M6

In Stock: 504

Stock:: 504 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Quantities greater than 504 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,19 €	5,19 €
	3,48 €	34,80 €
	2,51 €	251,00 €
	2,32 €	2.320,00 €
Full Reel (Order in multiples of 1800)
	2,32 €	4.176,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-LL-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	99 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	44.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	230 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	7.3 ns
Product Type:	MOSFETs
Rise Time:	5.3 ns
Series:	MDmesh M6
Factory Pack Quantity:	1800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50.2 ns
Typical Turn-On Delay Time:	15.2 ns
Unit Weight:	76 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STO36N60M6 Datasheet (PDF)

PCN

Technical Resources

TO-LL and MDmesh M6 the latest breakthrough in high-level telecom SMPS (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

MDmesh™ M6 MOSFETs

STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Q_g) with an optimised capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. They are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecoms, servers, and solar.