It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STN3P6F6

Name: STMicroelectronics STN3P6F6
Brand: STMicroelectronics
SKU: 511-STN3P6F6
Price: 1.18 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STN3P6F6

Mfr. No:

STN3P6F6

Mfr.:

STMicroelectronics

Description:

MOSFETs P-Ch 60 V, 0.13 Ohm 3 A STripFET VI

Complete Your Design

Datasheet:

STN3P6F6 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STN3P6F6

In Stock: 43.525

Stock:: 43.525 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 4000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,18 €	1,18 €
	0,532 €	5,32 €
	0,395 €	39,50 €
	0,336 €	168,00 €
	0,314 €	314,00 €
	0,303 €	606,00 €
Full Reel (Order in multiples of 4000)
	0,278 €	1.112,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-223-4
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	160 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	6.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	2.6 W
Channel Mode:	Enhancement
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	3.7 ns
Product Type:	MOSFETs
Rise Time:	5.3 ns
Series:	STN3P6F6
Factory Pack Quantity:	4000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	6.4 ns
Unit Weight:	250 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STN3P6F6 Datasheet (PDF)

PCN

TARIC:: 8541210000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412101
ECCN:: EAR99

STripFET VI™ Power MOSFETs

STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with an updated gate structure. The resulting STripFET Power MOSFET uses a trench technology for high efficiency and low R_DS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers, and solar. These STMicroelectronics MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.