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STL260N4LF7

Name: STMicroelectronics STL260N4LF7
Brand: STMicroelectronics
SKU: 511-STL260N4LF7
Price: 2.89 EUR
Availability: InStock

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Mouser No:

511-STL260N4LF7

Mfr. No:

STL260N4LF7

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x

Complete Your Design

Datasheet:

STL260N4LF7 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STL260N4LF7

In Stock: 2.515

Stock:: 2.515

Can Dispatch Immediately

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On Order:: 3.000

Expected 9/21/2026
Factory Lead Time:: 22

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,89 €	2,89 €
	1,87 €	18,70 €
	1,32 €	132,00 €
	1,07 €	535,00 €
	1,04 €	1.040,00 €
Full Reel (Order in multiples of 3000)
	0,972 €	2.916,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT5x6-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	1.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Fall Time:	23 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	74 ns
Typical Turn-On Delay Time:	21 ns
Unit Weight:	76 mg

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Datasheet

STL260N4LF7 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Italy
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.