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STL110NS3LLH7

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See Product Specifications

Mouser No:

511-STL110NS3LLH7

Mfr. No:

STL110NS3LLH7

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 30 V, 0.0027 Ohm typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 package

Complete Your Design

Lifecycle:

Obsolete

Datasheet:

STL110NS3LLH7 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-5x6-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	3.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	13.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	75 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	12.5 ns
Product Type:	MOSFETs
Rise Time:	10.4 ns
Series:	STL110NS3LLH7
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	31.8 ns
Typical Turn-On Delay Time:	26.4 ns
Unit Weight:	76 mg

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Filter Document:

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

STMicroelectronics STripFET™ H7 MOSFETs

STMicroelectronics STripFET H7 series are optimized for high-density, high-performance power management systems. The STripFET H7 have low conduction losses for a better efficiency, and switching performance improvement (lower VDS spike and no HF ringing). This series of trench-gate low-voltage MOSFETs combine an extremely low on-resistance and ultra low capacitances with an optimized built-in Schottky diode for higher switching frequency operation.
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