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STI33N60M2

Name: STMicroelectronics STI33N60M2
Brand: STMicroelectronics
SKU: 511-STI33N60M2
Price: 1.3 EUR
Availability: OutOfStock

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Mouser No:

511-STI33N60M2

Mfr. No:

STI33N60M2

Mfr.:

STMicroelectronics

Datasheet:

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Minimum: 1000 Multiples: 1000

Unit Price:

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Ext. Price:

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Qty.	Unit Price	Ext. Price
	1,30 €	1.300,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-262-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	26 A
Rds On - Drain-Source Resistance:	125 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	45.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	9 ns
Product Type:	MOSFETs
Rise Time:	9.6 ns
Series:	STI33N60M2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	109 ns
Typical Turn-On Delay Time:	16 ns
Unit Weight:	2,387 g