STH410N4F7-6AG

STMicroelectronics
511-STH410N4F7-6AG
STH410N4F7-6AG

Mfr.:

Description:
MOSFETs Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in
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Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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In Stock: 736

Stock:
736 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 736 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
4,88 € 4,88 €
3,53 € 35,30 €
2,60 € 260,00 €
2,31 € 1.155,00 €
Full Reel (Order in multiples of 1000)
2,12 € 2.120,00 €
2,10 € 4.200,00 €
2,09 € 10.450,00 €
10.000 Quote
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
H2PAK-6
N-Channel
1 Channel
40 V
200 A
1.1 mOhms
- 20 V, 20 V
4 V
120 nC
- 55 C
+ 150 C
365 W
Enhancement
AEC-Q101
STripFET
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 44.2 ns
Product Type: MOSFETs
Rise Time: 198 ns
Series: STH410N4F7-6AG
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 108 ns
Typical Turn-On Delay Time: 35 ns
Unit Weight: 1,380 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STripFET VI™ Power MOSFETs

STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with an updated gate structure. The resulting STripFET Power MOSFET uses a trench technology for high efficiency and low RDS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers, and solar. These STMicroelectronics MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET III™ Power MOSFETs

STMicroelectronics STripFET III™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with a gate structure. The resulting STripFET Power MOSFET exhibits a high current and low RDS(on). These STripFET Power MOSFETs have improved specific on-resistance for lower conduction losses. The planar technology used in these devices is ideal for high-efficiency, low-voltage systems.

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