STH180N10F3-2

STMicroelectronics
511-STH180N10F3-2
STH180N10F3-2

Mfr.:

Description:
MOSFETs N-Ch 100V 3.9 mOhm 180A STripFET

ECAD Model:
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In Stock: 1.072

Stock:
1.072 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1072 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
4,58 € 4,58 €
3,05 € 30,50 €
2,18 € 218,00 €
2,10 € 1.050,00 €
Full Reel (Order in multiples of 1000)
1,96 € 1.960,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
H2PAK-2
N-Channel
1 Channel
100 V
120 A
4.5 mOhms
- 20 V, 20 V
4 V
114.6 nC
- 55 C
+ 175 C
315 W
Enhancement
STripFET
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: SG
Fall Time: 6.9 ns
Product Type: MOSFETs
Rise Time: 97.1 ns
Series: STH180N10F3-2
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 4 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET III™ Power MOSFETs

STMicroelectronics STripFET III™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with a gate structure. The resulting STripFET Power MOSFET exhibits a high current and low RDS(on). These STripFET Power MOSFETs have improved specific on-resistance for lower conduction losses. The planar technology used in these devices is ideal for high-efficiency, low-voltage systems.