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STGWA8M120DF3

Name: STMicroelectronics STGWA8M120DF3
Brand: STMicroelectronics
SKU: 511-STGWA8M120DF3
Price: 3.53 EUR
Availability: OutOfStock

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Mouser No:

511-STGWA8M120DF3

Mfr. No:

STGWA8M120DF3

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

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Datasheet:

STGWA8M120DF3 Datasheet (PDF)

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Factory Lead Time:: 14 Weeks Estimated factory production time.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,53 €	3,53 €
	2,32 €	23,20 €
	1,63 €	163,00 €
	1,31 €	786,00 €
	1,25 €	1.500,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.85 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	16 A
Pd - Power Dissipation:	167 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	M
Packaging:	Tube
Brand:	STMicroelectronics
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs

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Datasheet

STGWA8M120DF3 Datasheet (PDF)

PCN

Product Change Notification 2025-7-29 (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive V_CE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.